View IRH7250_1319596.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 26 i d @ v gs = 12v, t c = 100c continuous drain current 16 i dm pulsed drain current ? 104 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? 26 a e ar repetitive avalanche energy ? 15 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in.(1.6mm) from case for 10s) weight 11.5 (t ypical ) g pre-irradiation international rectifier? s radhard hexfet ? technol- ogy provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been character- ized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. o c a radiation hardened power mosfet thru-hole (t0-204aa/ae) 12/04/02 www.irf.com 1 product summary part number radiation level r ds(on) i d IRH7250 100k rads (si) 0.11 ? 26a irh3250 300k rads (si) 0.11 ? 26a irh4250 600k rads (si) 0.11 ? 26a irh8250 1000k rads (si) 0.11 ? 26a for footnotes refer to the last page IRH7250 200v, n-channel rad hard ? hexfet ? technology to-204ae features: single event effect (see) hardened low r ds(on) low total gate charge proton t olerant simple drive requirements ease of paralleling hermetically sealed ceramic package light weight pd - 90697e
2 www.irf.com IRH7250 pre-irradiation note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 26 i sm pulse source current (body diode) ? ? ? 104 v sd diode forward voltage ? ? 1.4 v t j = 25c, i s = 26a, v gs = 0v ? t rr reverse recovery time ? ? 820 ns t j = 25c, i f = 26a, di/dt 100a/ s q rr reverse recovery charge ? ? 12 c v dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.83 r thja junction-to-ambient ? ? 30 c/w r thcs case-to-sink ? 0.12 ? typical socket mount electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 200 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.27 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.10 ? v gs = 12v, i d =16a resistance ? ? 0.11 v gs = 12v, i d = 26a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 8.0 ? ? s ( )v ds > 15v, i ds = 16a ? i dss zero gate voltage drain current ? ? 25 v ds = 160v ,v gs =0v ? ? 250 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 170 v gs =12v, i d =26a q gs gate-to-source charge ? ? 30 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 70 t d (on) turn-on delay time ? ? 33 v dd = 100v, i d =26a t r rise time ? ? 140 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 140 t f fall time ? ? 140 l s + l d total inductance ? 10 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 4700 ? v gs = 0v, v ds = 25v c oss output capacitance ? 850 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 210 ? na ? ? nh ns a
www.irf.com 3 pre-irradiation IRH7250 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100 k rads(si) 1 300 - 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 ? 200 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 25 ? 50 a v ds =160v, v gs =0v r ds(on) static drain-to-source ? ? 0.100 ? 0.155 ? v gs = 12v, i d =16a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.100 ? 0.155 ? v gs = 12v, i d =16a on-state resistance (to-204ae) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers IRH7250 2. part number irh3250, irh4250and irh8250 fig a. single event effect, safe operating area v sd diode forward voltage ? ? 1.4 ? 1.4 v v gs = 0v, i s = 26a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds(v) mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v@ v gs =-15v @ v gs =-20v cu 28 285 43 190 180 170 125 ? br 36.8 305 39 100 100 100 50 ? 0 50 100 150 200 0 -5 -10 -15 -20 vgs vds cu br
4 www.irf.com IRH7250 pre-irradiation post-irradiation fig 2. typical response of on-state resistance vs. total dose exposure fig 1. typical response of gate threshhold voltage vs. total dose exposure fig 3. typical response of transconductance vs. total dose exposure fig 4. typical response of drain to source breakdown vs. total dose exposure
www.irf.com 5 pre-irradiation IRH7250 post-irradiation fig 6. typical on-state resistance vs. neutron fluence level fig 5. typical zero gate voltage drain current vs. total dose exposure fig 8b. v dss stress equals 80% of b vdss during radiation fig 7. typical transient response of rad hard hexfet during 1x10 12 rad (si)/sec exposure fig 8a. gate stress of v gss equals 12 volts during radiation
6 www.irf.com IRH7250 pre-irradiation post-irradiation radiation characteristics fig 10. typical output characteristics post-irradiation 100k rads (si) fig 9. typical output characteristics pre-irradiation fig 11. typical output characteristics post-irradiation 300k rads (si) fig 12. typical output characteristics post-irradiation 1 mega rads (si) note: bias conditions during radiation: v gs = 12 vdc, v ds = 0 vdc
www.irf.com 7 pre-irradiation IRH7250 radiation characteristics fig 15. typical output characteristics post-irradiation 300k rads (si) fig 16. typical output characteristics post-irradiation 1 mega rads (si) fig 13. typical output characteristics pre-irradiation fig 14. typical output characteristics post-irradiation 100k rads (si) note: bias conditions during radiation: v gs = 0 vdc, v ds = 160 vdc
8 www.irf.com IRH7250 pre-irradiation fig 20. normalized on-resistance vs. temperature fig 18. typical output characteristics fig 17. typical output characteristics fig 19. typical transfer characteristics
www.irf.com 9 pre-irradiation IRH7250 fig 24. maximum safe operating area fig 22. typical gate charge vs. gate-to-source voltage fig 21. typical capacitance vs. drain-to-source voltage fig 23. typical source-drain diode forward voltage 29
10 www.irf.com IRH7250 pre-irradiation fig 26a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 26b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 27. maximum effective transient thermal impedance, junction-to-case fig 25. maximum drain current vs. case temperature v gs
www.irf.com 11 pre-irradiation IRH7250 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 29b. gate charge test circuit fig 29a. basic gate charge waveform fig 28c. maximum avalanche energy vs. drain current fig 28b. unclamped inductive waveforms fig 28a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
12 www.irf.com IRH7250 pre-irradiation ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 25v, starting t j = 25c, l=1.48mh peak i l = 26a, v gs =12v ? i sd 26a, di/dt 190a/ s, v dd 200v, t j 150c foot notes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/02 case outline and dimensions ? to-204ae

▲Up To Search▲

Price & Availability of IRH7250

	To Download IRH7250 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .